Design and Simulation of Capacitive MEMS Switch for Ka Band Application
نویسندگان
چکیده
In this paper, RF MEMS switch with capacitive contact is designed and analyzed for Ka band application. A fixed-fixed beam/meander configuration has been used to design the frequency 10 GHz 40 GHz. Electromagnetic electromechanical analysis of three-dimensional (3D) structure/design in multiple finite element method (FEM) based full-wave simulator (Coventorware high-frequency structure simulator). comparative study also carried out work. The high resistivity silicon substrate ( tan?=0.010 , id="M2">?>8 k??cm id="M3">?r=11.8 ) a thickness id="M4">675±25 ?m taken realization. shows an actuation voltage around 9.2 V. Impedance matching well below 20 dB, loss upstate, i.e., insertion >0.5 isolation >25 dB throughout observed aforesaid structure. Furthermore, increase parameters, AIN dielectric material instead SiO2 resulting capacitance downstate that increases hence improved isolation. proposed can be utilized various potential applications such as any switching/tunable networks phased-array radar, reconfigurable antenna, phase shifter, mixer, biomedical, filter, transmitter/receiver (T/R) modules.
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ژورنال
عنوان ژورنال: Wireless Communications and Mobile Computing
سال: 2021
ISSN: ['1530-8669', '1530-8677']
DOI: https://doi.org/10.1155/2021/2021513